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tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 copyright ? 1991, texas instruments incorporated 2-1 post office box 655303 ? dallas, texas 75265 ? high-resolution, solid-state frame-transfer image sensor ? 17.2-mm image-area diagonal ? 1000 (h) x 1018 (v) active elements in image-sensing area ? square pixels ? low dark current ? electron-hole recombination antiblooming ? dynamic range . . . more than 60 db ? high sensitivity ? high photoresponse uniformity ? high blue response ? single-phase clocking ? solid-state reliability with no image burn-in, residual imaging, image distortion, image lag, or microphonics description the tc215 is a full-frame charge-coupled-device (ccd) image sensor that provides very high-resolution image acquisition for image-processing applications such as robotic vision, medical x-ray analysis, and metrology. the image format measures 12 mm horizontally by 12.216 mm vertically; the image-area diagonal is 17.2 mm. the image-area pixels are 12- m m square. the image area contains 1018 active lines with 1000 active pixels per line. six additional dark reference lines give a total of 1024 lines in the image area, and 24 additional dark reference pixels per line give a total of 1024 pixels per horizontal line. the full-frame image sensor should be used with a shutter or with strobed illumination to prevent smearing of the image during readout. to prepare the imaging area for image capture, the photoelectric charge that has accumulated in the image pixels can be transferred into the clearing drain in one millisecond. after image capture (integration time), the readout is accomplished by transferring the charge, one line at a time, into two serial registers, each of which contains 512 data elements and 12 dummy elements. the typical serial-register clocking rate is 10 megapixels per second. operating the tc215 at the typical data rate of one field per frame generates video output at a continuous 15 frames per second. gated floating-diffusion detection structures are used with each serial register to convert charge to signal voltage. external reset allows the application of off-chip correlated clamp sample-and-hold amplifiers for low-noise performance. to provide high output-drive capability, both outputs are buffered by low-noise, two-stage, source-follower amplifiers. these two output signals can provide a data rate of 20 megapixels per second when combined off chip. at room temperature, the readout noise is 55 electrons and a minimum dynamic range of 60 db is available. this mos device contains limited built-in gate protection. during storage or handling, the device leads should be shorted toget her or the device should be placed in conductive foam. in a circuit, unused inputs should always be connected to sub. under no circumstances should pin voltages exceed absolute maximum ratings. avoid shorting outn to adb during operation to prevent damage to the amplifier. the device can also be damaged if the output terminals are reverse-biased and an excessive current is allowed to flow. specific guidelines for handling devices of this type are contained in the publication guidelines for handling electrostatic-discharge-sensitive (esds) devices and assemblies available from texas instruments. trg srg2 srg1 cdb rst1 rst2 sub adb out2 amp gnd out1 iag2 abg1 iag1 sub sub tdb sub iag1 abg1 iag2 abg2 24 23 22 21 20 19 18 17 16 15 11 10 9 8 7 6 5 4 3 2 1 dual-in-line package (top view) idb abg2 13 12 14 production data information is current as of publication date. products conform to specifications per the terms of texas instruments standard warranty. production processing does not necessarily include testing of all parameters.
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-2 post office box 655303 ? dallas, texas 75265 description (continued) the blooming protection incorporated into the sensor is based on recombining excess charge with charge of oppositie polarity in the substrate. this antiblooming is activated by supplying clocking pulses to the antiblooming gate, which is an integral part of each image-sensing element. the tc215 is built using ti-proprietary virtual-phase technology, which provides devices with high blue response, low dark signal, good uniformity, and single-phase clocking. the tc215 is characterized for operation from 10 c to 40 c. functional block diagram 24 dark reference elements clearing drain amplifiers out1 out2 rst2 abg1 tdb 19 15 6 3 1 2 amp gnd cdb 8 srg2 srg1 trg idb 11 9 10 abg2 24 iag2 abg1 23 22 blooming protection image area with top drain 12 dummy elements multiplexer, transfer gates, and serial registers 12 iag1 21 iag1 16 adb 4 abg2 13 iag2 14 rst1 7
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-3 post office box 655303 ? dallas, texas 75265 sensor topology diagram 1 pixel 1000 pixels 6 lines 12 dummy pixels opb 1018 lines 511 12 511 22 pixels 1 pixel terminal functions terminal i/o description name no. i/o description abg1 2 15 i antiblooming gate for upper image area abg1 2 22 i antiblooming gate for upper image area abg2 2 13 i antiblooming gate for lower image area abg2 2 24 i antiblooming gate for lower image area adb 4 i supply voltage for amplifier drain bias amp gnd 2 amplifier ground cdb 8 i supply voltage for clearing drain bias iag1 2 16 i upper image-area gate iag1 2 21 i upper image-area gate iag2 2 14 i lower image-area gate iag2 2 23 i lower image-area gate idb 12 i supply voltage for input diode bias out1 1 o output signal 1 out2 3 o output signal 2 rst1 7 i reset gate 1 rst2 6 i reset gate 2 srg1 9 i serial-register gate 1 srg2 10 i serial-register gate 2 sub 2 5 substrate and clock return sub 2 17 substrate and clock return sub 2 18 substrate and clock return sub 2 20 substrate and clock return tdb 19 i supply voltage for top drain bias trg 11 i transfer gate 2 all terminals of the same name should be connected together externally (i.e., pin 15 to pin 22, pin 13 to pin 24, etc.).
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-4 post office box 655303 ? dallas, texas 75265 detailed description the tc215 consists of three basic functional blocks: (1) the image-sensing area, (2) the multiplexer block with serial registers and transfer gates, and (3) the low-noise signal-processing amplifier block with charge-detection nodes. the location of each of these blocks is identified in the functional block diagram. image-sensing area figures 1 and 2 show cross sections with potential well diagrams and top views of image-sensing elements. as light enters the silicon in the image-sensing area, free electrons are generated and collected in the potential wells of the sensing elements. during this time, blooming protection is activated by applying a burst of pulses to the antiblooming gate inputs every horizontal blanking interval. this prevents blooming caused by the spilling of charge from overexposed elements into neighboring elements. after integration is complete, the signal charge is transferred in the dark to the two serial registers, where it is read out line by line. there are 24 full columns of elements at the left edge of the image-sensing area that are shielded from incident light; these elements provide the dark reference used in subsequent video-processing circuits to restore the video black level. there are also six dark lines at the bottom of the sensor. multiplexer with transfer gates and serial registers the multiplexer and transfer gates transfer charge line by line from the image-sensing columns into the corresponding serial registers and prepare it for readout. figure 3 illustrates the layout of the multiplexing gate that vertically separates the pixels for input into the serial registers. figure 4 shows the layout of the interface region between the serial-register gates and the transfer gates. multiplexing is activated during the horizontal blanking interval by applying appropriate pulses to the transfer gates and serial registers; the required pulse timing is shown in figure 5. a drain is also included to provide the capability to clear the image-sensing area of unwanted charge. such charge can accumulate in the imager during the start-up of operation or under special circumstances. the clearing timing is illustrated in figure 6. serial-register readout and video processing after transfer into the serial registers, the pixels are normally read out 180 out of phase (see figure 7). each serial register must be reset to the reference level before the next pixel is read out. the timing for the resets and their relationships to the serial-register pulses is shown in figure 8. figure 8 also shows the timing for the pixel clamp and sample and hold needed for an off-chip double-correlated sampling circuit. these two output signals can provide a data rate of 20 million pixels per second when combined off chip. after the charge is placed on the detection node, it is buffered and amplified by a low-noise, dual-stage source follower. each serial register contains 12 dummy elements that are used to span the distance between the serial register and the output amplifier. a schematic is shown in figure 9. the location of the dummy elements, which are considered to be part of the amplifiers, is shown in the functional block diagram. figure 10 gives the timing for a single frame of video. operating the tc215 at the typical data rate of one field per frame generates video output at a continuous 15 frames per second.
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-5 post office box 655303 ? dallas, texas 75265 f -abg f -iag 12 m m(h) clocked barrier virtual barrier antiblooming gate virtual well clocked well light antiblooming clocking levels accumulated charge 12 m m(v) figure 1. charge-accumulation process f -iag channel stops virtual phase clocked phase figure 2. charge-transfer process gate transfer gate register serial- wells clocked channel stops virtual well channel stop multiplexing gate clocked well figure 3. multiplexing-gate layout figure 4. interface-region layout
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-6 post office box 655303 ? dallas, texas 75265 cpob2 cpob1 abg1, 2 iag1, 2 low low low sh2 sh1 cl2 low high high cl1 rst2 rst1 srg2 srg1 trg cblnk csync figure 5. horizontal timing
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-7 post office box 655303 ? dallas, texas 75265 high high rst2 rst1 srg2 srg1 trg abg1,2 iag2 iag1 line 1024 line 1023 line 2 line 1 1 m s figure 6. clearing timing srg1 srg2 image black reference dummy 12 1 2 3 12 1 2 12 3 3 2 1 12 11 2 1 12 11 3 2 1 note a: a minimum of 524 clock pulses is required to transfer out all elements of a serial register. overclocking is recommended . figure 7. start of serial-transfer timing
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-8 post office box 655303 ? dallas, texas 75265 sh2 cl2 out2 rst2 srg2 sh1 cl1 out1 rst1 srg1 out sh cl rst srg clamp pixel buffer ccd amplifier and-hold sample- note a: the video-processing (off-chip) pulses are defined as follows: cl1 = clamp pulse for video from out1 cl2 = clamp pulse for video from out2 sh1 = sample pulse for the sample-and-hold amplifier for video 1 sh2 = sample pulse for the sample-and-hold amplifier for video 2 csync = composite video-sync pulse cblnk = composite video-blanking pulse cpob1 = dark-reference clamp pulse for video from out1 cpob2 = dark-reference clamp pulse for video from out2 figure 8. video-process timing
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-9 post office box 655303 ? dallas, texas 75265 outn adb srgn two-stage source- follower amplifier reset gate and output diode detection node ccd register virtual gate clocked gate reference generator rstn figure 9. buffer amplifier and charge-detection node clearing 1024 pulses readout (shutter open) integration 541 pulses rst2 rst1 abg1,2 srg2 srg1 trg iag1,2 horizonal timing start of serial transfer figure 10. clock timing requirements single-frame mode
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-10 post office box 655303 ? dallas, texas 75265 spurious nonuniformity specification the spurious nonuniformity specification of the tc215 ccd grades 30 and 40 is based on several sensor characteristics: ? amplitude of the nonuniform line or pixel ? polarity of the nonuniform pixel black white ? nonuniform line or pixel count the ccd sensors are characterized in both an illuminated condition and a dark condition. in the dark condition, the nonuniformity is specified in terms of absolute amplitude as shown in figure 11. in the illuminated condition, the nonuniformity is specified as a percentage of the total illumination as shown in figure 12. the pixel nonuniformity specification for the tc215 is as follows (ccd video-output signal is 50 mv 10 mv): nonuniformity type tc215- 30 tc215 - 40 line maximum amplitude = 1.4 mv line number with amplitude greater than 1 mv is 5 white spot (40 c) maximum amplitude = 25 mv white s p ot (25 c) maximum amplitude = 15 mv maximum amplitude = 20 mv white spot (25 c) number with amplitude greater than 10 mv = b black s p ot (% of total illumination) maximum amplitude = 25% maximum amplitude = 30% black spot (% of total ill u mination) number with amplitude greater than 10% = c total number of nonuniformities b+c < 20 mv amplitude t illumination % of total t figure 11. pixel nonuniformity, figure 12. pixel nonuniformity, dark condition illuminated condition
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-11 post office box 655303 ? dallas, texas 75265 absolute maximum ratings over operating free-air temperature range (unless otherwise noted) 2 supply voltage range for adb, cdb, idb, tdb (see note 1) 0 v to 15 v . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . input voltage range for abg1, abg2, iag1, iag2, rst1, rst2, srg1, srg2, trg 15 v to 15 v . . . . . . operating free-air temperature range, t a 10 c to 40 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . storage temperature range 30 c to 85 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 260 c . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 stresses beyond those listed under aabsolute maximum ratingso may cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated under arecommended operating conditi onso is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. note 1: all voltage values are with respect to the substrate terminal. recommended operating conditions min nom max unit supply voltage for adb, cdb, idb, tdb 11 12 13 v substrate bias voltage 0 v 3 iag1 iag2 high level 1.5 2 2.5 3 iag1 , iag2 low level 11 9 3 srg1 srg2 high level 1.5 2 2.5 3 srg1 , srg2 low level 11 9 3 rst1 rst2 high level 1.5 2 2.5 input voltage, v i 3 rst1 , rst2 low level 11 9 v g i high level 5 5.5 6 abg1, abg2 intermediate level 1.5 1. 2 0.9 low level 7.5 7 6.5 trg high level 1.5 2 2.5 trg low level 11 9 trg, srg1, srg2, rst1, rst2 10 clock frequency, f clock iag1, iag2 1 mhz abg1, abg2 1 capacitive load out1, out2 8 pf operating free-air temperature, t a 10 40 c 3 the algebraic convention, in which the least-positive (most negative) value is designated minimum, is used in this data sheet f or clock voltage levels. adjustment is required for optimal performance.
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-12 post office box 655303 ? dallas, texas 75265 electrical characteristics over recommended operating ranges of supply voltage and free-air temperature parameter min typ 2 max unit dynamic range (see note 2) 60 db charge conversion factor 6 m v/e charge transfer efficiency (see note 3) 0.99990 signal response delay time, t (see note 4 and figure 16) 18 20 22 ns gamma (see note 5) 0.89 0.94 0.99 output resistance 1000 w noise voltage 1/f noise (5 khz) 0.1 m v/ hz noise v oltage random noise (f = 100 khz) 0.08 m v/ hz noise equivalent signal 60 electrons adb (see note 6) 20 rejection ratio at 10 mhz srgn (see note 7) 40 db abgn (see note 8) 30 supply current 9 ma iag1, iag2 15000 in p ut ca p acitance c i abg1, abg2 8000 p f in ut ca acitance , c i trg 350 f srg1, srg2 200 2 all typical values are at t a = 25 c. notes: 2. dynamic range is 20 times the logarithm of the mean noise signal divided by the saturation output signal. 3. charge transfer efficiency is one minus the charge loss per transfer in the output register (1046 transfers). the test is per formed in the dark using an electrical input signal. 4. signal-response delay time is the time between the falling edge of the srg clock pulse and the output signal valid state. 5. gamma ( g ) is the value of the exponent in the equation below for two points on the linear portion of the transfer function curve (this value represents points near saturation): exposure (2) exposure (1) output signal (2) output signal (1) 6. adb rejection ratio is 20 times the logarithm of the ac amplitude on outn divided by the ac amplitude on adb. 7. srgn rejection ratio is 20 times the logarithm of the ac amplitude on outn divided by the ac amplitude on srgn. 8. abgn rejection ratio is 20 times the logarithm of the ac amplitude on outn divided by the ac amplitude on abgn.
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-13 post office box 655303 ? dallas, texas 75265 optical characteristics, t a = 25 c , integration time = 33 ms (unless otherwise noted ) parameter min typ max unit sensitivity (see note 9) no ir filter measured at v u 518 mv/lx sensiti v it y (see note 9) with ir filter u (see note 10) 64 mv/l x saturation signal, v sat (see note 11) 320 mv maximum usable signal, v use 200 mv blooming overload ratio (see note 12) 100 image-area well capacity 60 x 10 3 electrons dark current t a = 21 c 0.027 na/cm 2 dark signal (see note 13) t a =40 c tc215-30 5 mv dark signal (see note 13) t a = 40 c tc215-40 5 mv pixel uniformity tc215-30 15 mv pi x el u niformit y tc215-40 20 mv column uniformity tc215-30 1.4 mv col u mn u niformit y tc215-40 1.4 mv shading v o = 1/2 v u (see note 10) 15% notes: 9. sensitivity is measured at an integration time of 33 ms with a source temperature of 2859 k. a cm-500 filter is used. s ensitivity is measured at any illumination level that gives an output voltage level less than v u . 10. v u is the output voltage that represents the threshold of operation of antiblooming. v u 1/2 saturation signal. 11. saturation is the condition in which further increase in exposure does not lead to further increase in output signal. 12. blooming is the condition in which charge is induced in an element by light incident on another element. blooming overload r atio is the ratio of blooming exposure to saturation exposure. 13. dark-signal level is measured from the dark dummy pixels. timing requirements min max unit iag1, iag2 200 srg1, srg2 10 t r rise time rst1, rst2 10 ns trg 200 abg1, abg2 100 iag1, iag2 200 srg1, srg2 10 t f fall time rst1, rst2 10 ns trg 200 abg1, abg2 100
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-14 post office box 655303 ? dallas, texas 75265 parameter measurement information dr (dynamic range) camera white clip voltage v n v n = noise floor voltage v sat (min) = minimum saturation voltage v use (max) = maximum usable voltage v use (typ) = typical user voltage (camera white clip) (light input) lux enabled with antiblooming blooming point well capacity dependent on disabled with antiblooming blooming point gate high level upon antiblooming level dependent dr v n v sat (min) v use (typ) v use (max) v o notes: a. v use (typ) is defined as the voltage determined to equal the camera white clip. this voltage must be less than v use (max) . b. a system trade-off is necessary to determine the system light sensitivity versus the signal/noise ratio. by lowering the v use (typ) , the light sensitivity of the camera is increased; however, this sacrifices the signal/noise ratio of the camera. figure 13. typical v sat , v use relationship
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-15 post office box 655303 ? dallas, texas 75265 parameter measurement information t f t r 0% v il max 10% intermediate level v ih min 90% 100% figure 14. typical clock waveform for abg1, abg2, iag1, and iag2 t f t r 0% v il max 10% v ih min 90% 100% figure 15. typical clock waveform for rst1, rst2, srg1, srg2, and trg hold and sample 100% 90% out srg 9 v 0% 9 v to 11 v 1.5 v to 2.5 v ccd delay t 15 ns 10 ns figure 16. srg and ccd out waveforms
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-16 post office box 655303 ? dallas, texas 75265 application information 13 12 v image sensor abg2 iag2 abg1 iag1 sub sub tdb sub iag1 abg1 iag2 abg2 idb trg srg2 srg1 cdb rst1 rst2 sub adb out2 amp gnd out1 12 v out 2 1 k w 100 w out 1 12 v 13 14 15 16 17 18 19 20 21 22 23 24 12 11 10 9 8 7 6 5 4 3 2 1 master oscillator gnd v cc gnd out v cc v ss user-defined timer srg2 srg1 rst1 rst2 iag2 gt2 abg2 gt1 abg1 iag1 trg sh1 sh2 csync cl1 cl2 cblnk clk sh1 sh2 cl1 cl2 cblnk sel0out gnd pd srg3in srg2in srg1in trgin nc sel1out sel0 nc v cc srg3out srg2out srg1out trgout v cc sel1 v cc v cc sel1 v cc trgout srg1out srg2out srg3out v cc nc sel0 sel1out nc trgin srg1in srg2in srg3in pd gnd sel0out 1 2 3 4 5 6 7 8 9 19 18 17 16 15 14 13 12 11 11 12 13 14 15 16 17 18 19 9 8 7 6 5 4 3 2 1 ialvl i /n iain abin midsel sain pd gnd v agb+ iasr absr v cc ablvl iaout about saout v cc v abg 1 2 3 4 5 6 7 8 9 19 18 17 16 15 14 12 11 ablvl v abg v v cc v abg + v abg + v cc v v abg ablvl 11 12 13 14 15 16 17 18 19 9 8 7 6 5 4 3 2 1 v abg v cc saout about iaout ablvl v cc absr iasr v agb+ gnd pd sain midsel abin iain i /n ialvl v 100 w parallel driver 1 k w adb v cc v ss v ablvl v abg + v abg 12 v 5 v 10 v 2 v 2.5 v 4 v 6 v dc voltages v ss 10 20 v ss v ss 10 v ss 20 v ss 10 v ss 20 10 v ss v ss 20 csync 2n3904 2n3904 12 v tms3473b parallel driver tms3473b sn28846 serial driver sn28846 serial driver tc215 support circuits device package application function SN28846DW 20 pin small outline serial driver driver for trg, srg1, srg2, rst1, rst2 tms3473bdw 20 pin small outline parallel driver driver for iag1, iag2, abg1, abg2 figure 17. typical application circuit diagram
tc215 1024- 1024-pixel ccd image sensor socs014b august 1989 revised december 1991 2-17 post office box 655303 ? dallas, texas 75265 mechanical data the package for the tc215 consists of a ceramic base, a glass window, and a 24-lead frame. the glass window is sealed to the package by an epoxy adhesive. the package leads are configured in a dual in-line organization and fit into mounting holes with 2,54 mm (0.1 in) center-to-center spacings. t. p. 30,91 (1.217) 30,05 (1.183) 2,54 (1.000) 2,67 (0.105) nom 2,00 (0.079) nom dia 12,50 (0.492) nom 6,80 (0.268) 5,80 (0.228) optical center and package center (see note c) 22,83 (0.899) 22,38 (0.881) +0.01 (+0.0004) 20,93 (0.824) 20,83 (0.820) 1,40 (0.055) 0,64 (0.025) 6,30 (0.248) 4,70 (0.185) 2,54 (0.100) 20,93 (0.824) 20,83 (0.820) 4,93 (0.194) max 3,81 (0.150) nom 0,33 (0.013) 0,17 (0.007) 23,29 (0.917) 22,43 (0.883) all linear dimensions are in millimeters and parenthetically in inches 7/94 notes: a. each pin centerline is located within 2,54 mm (0.1 inch) of its true longitudinal position. b. the center of the package and the center of the image area are not coincident. c. maximum rotation is 3.5 .
socs014b august 1989 revised december 1991 2-18 post office box 655303 ? dallas, texas 75265
important notice texas instruments and its subsidiaries (ti) reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information to verify, before placing orders, that information being relied on is current and complete. all products are sold subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those pertaining to warranty, patent infringement, and limitation of liability. ti warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with ti's standard warranty. testing and other quality control techniques are utilized to the extent ti deems necessary to support this warranty. specific testing of all parameters of each device is not necessarily performed, except those mandated by government requirements. certain applications using semiconductor products may involve potential risks of death, personal injury, or severe property or environmental damage (acritical applicationso). ti semiconductor products are not designed, authorized, or warranted to be suitable for use in life-support devices or systems or other critical applications. inclusion of ti products in such applications is understood to be fully at the customer's risk. in order to minimize risks associated with the customer's applications, adequate design and operating safeguards must be provided by the customer to minimize inherent or procedural hazards. ti assumes no liability for applications assistance or customer product design. ti does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other intellectual property right of ti covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. ti's publication of information regarding any third party's products or services does not constitute ti's approval, warranty or endorsement thereof. copyright ? 1998, texas instruments incorporated

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